Nanoelectronics Advances: Future Applications from Quantum Phenomena
Keywords:
Nanoelectronics, Quantum Phenomena, Nanomaterials, Communication Technologies, Energy Conversion and StorageAbstract
By utilising the special qualities of materials and quantum phenomena, nanoelectronics-the study and use of electrical devices at the nanoscalehas completely changed the area of electronics. This review article offers a thorough summary of current developments in nanoelectronics, addressing everything from basic quantum effects to state-of-the-art applications. Unprecedented improvements in computing, sensing, energy conversion, communication have been made possible by the combination of nanomaterials, innovative device architectures, quantum technologies.
The nanoscale introduces amazing behaviours, such as tunnelling, quantization, quantum confinement, in the area of quantum phenomena. This review examines their enormous effects on the functionality and behaviour of electronic devices, using quantum dots and single-electron transistors as examples. The superposition and entanglement principles, which underpin quantum computing and quantum communication, have the revolutionary potential to transform secure data transfer and information processing.
Additionally, the interaction of nanomaterials and nanoelectronic technology has produced revolutionary results. Two-dimensional materials, carbon nanotubes, graphene have displayed remarkable electrical, thermal, mechanical properties. The importance of their incorporation into transistors, memory systems, sensors is emphasised in this article, which also highlights the crucial impact that size, shape, composition play in adjusting material properties.
Novel device architectures show promise as conventional silicon-based technologies near their physical constraints. With an emphasis on their energy efficiency and performance improvements, FinFETs, nanowire transistors, memristors are examined as viable replacements. Parallel to this, the fusion of neuroscience and nanoelectronics has led to the development of neuromorphic computing, which allows machines to mimic complex neurological functions and has sparked revolutionary advances in artificial intelligence.
References
References
Chen J, Jang C, Adam S. Charged-impurity scattering in graphene. Nature Physics 2008; 4(5): 377-381.
Novoselov KS, Jiang D, Schedin F. Two-dimensional atomic crystals. Proceedings of the National Academy of Sciences 2005; 102(30): 10451-10453.
Balandin AA, Ghosh S, Bao W. Superior thermal conductivity of single-layer graphene. Nano Letters 2008; 8(3): 902-907.
Schwierz F. Graphene transistors. Nature Nanotechnology 2010; 5(7): 487-496.
Lee C, Wei X, Kysar J. Measurement of the elastic properties and intrinsic strength of monolayer graphene. Science 2008; 321(5887): 385-388.
He K, Robertson AW, Lee CH. Fabrication of highquality atomically thin MoO3 films by ambient-pressure chemical vapor deposition. Chemistry of Materials 2018; 30(13): 4235-4242.
Bansal A, Hersam MC. Nanoscale phenomena in oxide thin films and nanostructures. MRS Bulletin 2011; 36(12): 943-951.
Piquemal JY, Gouzerh P, Le Floch P. Nanoscale mphenomena in multiferroic and magnetoelectric materials. Advanced Materials 2005; 17(17): 2133- 2136.
Koppens FH, Muelle T, Avouris P. Photodetectors based on graphene, other two-dimensional materials and hybrid systems. Nature Nanotechnology 2014; 9(10): 780-793.
Konstantatos G, Badioli M, Gaudreau L. Hybrid graphene–quantum dot phototransistors with ultrahigh gain. Nature Nanotechnology 2012; 7(6): 363-368.
Yoo D, Kim YS, Kim SK et al. Air-stable n-type doping of graphene by ultraviolet irradiation of thiourea. Nature Communications 2014; 5(1): 1-8.
Jariwala D, Sangwan VK, Lauhon LJ et al. Emerging device applications for semiconducting two-dimensional transition metal dichalcogenides. ACS Nano 2014; 8(2): 1102-1120.
Choi W, Lahiri I, Seelaboyina R et al. Synthesis of graphene and its applications: a review. Critical Reviews in Solid State and Materials Sciences 2010; 35(1): 52-71.
Tans SJ, Verschueren AR, Dekker C. Room-temperature transistor based on a single carbon nanotube. Nature 1998; 393(6680): 49-52.
Cao Q, Rogers JA. Ultrathin films of single-walled carbon nanotubes for electronics and sensors: a review of fundamental and applied aspects. Advanced Materials, 2009; 21(1): 29-53.
Xia F, Mueller T, Lin YM et al. Ultrafast graphene photodetector. Nature Nanotechnology 2009; 4(12): 839-843.
Geim AK, Novoselov KS. The rise of graphene. Nature Materials 2007; 6(3): 183-191.
Avouris, P. (2010). Graphene: electronic and photonic properties and devices. Nano Letters, 10(11), 4285- 4294.
Manzeli S, Ovchinnikov D, Pasquier D et al. 2D transition metal dichalcogenides. Nature Reviews Materials 2017; 2(8): 17033.
Nair RR, Blake P, Grigorenko AN. Fine structure constant defines visual transparency of graphene. Science 2008; 320(5881): 1308-1308.
Li L, Yu Y, Ye GJ et al. Black phosphorus field-effect transistors. Nature Nanotechnology 2014; 9(5): 372- 377.
Schuster R, Koller A, Kapfinger S et al. Long-lived quintuplet state in a coupled quantum dot–cavity system. Nature 2017; 547(7661): 193-196.
Müller K, Gayral B. Semiconductor nanolasers. Nature Reviews Materials 2017; 2(6): 17050.
Zhang Y, Tan YW, Stormer HL. Experimental observation of the quantum Hall effect and Berry’s phase in graphene. Nature 2005; 438(7065): 201-204.
Wang QH, Kalantar-Zadeh K, Kis A et al. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. Nature Nanotechnology 2012; 7(11): 699-712.
Published
Issue
Section
Copyright (c) 2023 Journal of Advanced Research in Nanoscience and Nanotechnology
This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License.
We, the undersigned, give an undertaking to the following effect with regard to our article entitled
“_______________________________________________________________________________________________________________________________________________________________________________
________________________________________________________________________________” submitted for publication in (Journal title)________________________________________________ _______________________________________________________Vol.________, Year _________:-
1. The article mentioned above has not been published or submitted to or accepted for publication in any form, in any other journal.
2. We also vouchsafe that the authorship of this article will not be contested by anyone whose name(s) is/are not listed by us here.
3. I/We declare that I/We contributed significantly towards the research study i.e., (a) conception, design and/or analysis and interpretation of data and to (b) drafting the article or revising it critically for important intellectual content and on (c) final approval of the version to be published.
4. I/We hereby acknowledge ADRs conflict of interest policy requirement to scrupulously avoid direct and indirect conflicts of interest and, accordingly, hereby agree to promptly inform the editor or editor's designee of any business, commercial, or other proprietary support, relationships, or interests that I/We may have which relate directly or indirectly to the subject of the work.
5. I/We also agree to the authorship of the article in the following sequence:-
Authors' Names (in sequence) Signature of Authors
1. _____________________________________ _____________________________________
2. _____________________________________ _____________________________________
3. _____________________________________ _____________________________________
4. _____________________________________ _____________________________________
5. _____________________________________ _____________________________________
6. _____________________________________ _____________________________________
7. _____________________________________ _____________________________________
8. _____________________________________ _____________________________________
Important
(I). All the authors are required to sign independently in this form in the sequence given above. In case an author has left the institution/ country and whose whereabouts are not known, the senior author may sign on his/ her behalf taking the responsibility.
(ii). No addition/ deletion/ or any change in the sequence of the authorship will be permissible at a later stage, without valid reasons and permission of the Editor.
(iii). If the authorship is contested at any stage, the article will be either returned or will not be
processed for publication till the issue is solved.
