Characteristics of CdS Thin Film Fabrication by SILAR Method
Keywords:
SILAR, CdS, Solar Cell, Band Gap Energy, Bottom-UpAbstract
This current article discuss about the fabrication of CdS using SILAR
method which is cost effective. This method achieved elimation of
high temperature annealing and usage of exposure of toxic elements
which is followed by previous methods. Description of topography,
compositional, optical and structural characteristics of a cost effective
CdS thin film deposition using the SILAR method on glass substrate for
window layer in solar cell application. The specimens were defined by
the various instrumentation techniques such as X-Ray diffraction (XRD),
UV-VIS-NIS spectrometry, Field Emission Scanning Electron Microscope
(FESEM) attacted with Elemental Analysis (EDX). XRD results indicated
prefect polycrystalline phase CdS. UV Spectrophotometer of CdS thin
film was found Bandgap is 2.4 eV. At a glance the Morphology of the
film by FESEM showed the deposited film is crack free and deposited
uniformly.
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