Transistors Under Influence of Humidity

Authors

Abstract

In this paper the effect of humidity is considered on transistors. The forward current transfer ratio (hfe) of transistor varies due to the absorption of moisture. The dependence of performance of p-channel of the transistors on RH value of humidity is determined. A decrease in current output and mobility is observed.

How to cite this article:
Chauhan RS. Transistors Under Influence of Humidity. J Adv Res Power Electro Power Sys2020; 7(4): 32-34.

References

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Published

2021-01-16