Progress in Power Semiconductor Devices: An Overview

Authors

  • Devendra Tripathi Student, Aurora Group of Institutions, Hyderabad, Hyderabad, Telangana.

Keywords:

Smart Meters, Predictive Maintenance, Grid Optimization, Big Data Analytics, Customer Engagement

Abstract

Power semiconductor devices are essential components in a wide range of applications, from consumer electronics to renewable energy systems and electric vehicles. This review article explores recent advancements in power semiconductor technology, focusing on both silicon-based devices and emerging technologies such as wide-bandgap semiconductors. Silicon MOSFETs and IGBTs continue to evolve with improved efficiency, reduced losses, and higher voltage ratings. Meanwhile, wide-bandgap materials like silicon carbide (SiC) and gallium nitride (GaN) offer superior properties, including higher breakdown voltage and lower losses. The integration of advanced cooling solutions and packaging techniques further enhances device performance and reliability. Despite challenges, ongoing research aims to drive innovation in power semiconductor devices, promising more efficient, compact, and reliable power electronic solutions for the future.

References

Baliga BJ. Silicon carbide power devices. InSpringer Handbook of Semiconductor Devices 2022 Nov 11 (pp. 491-523). Cham: Springer International Publishing.

Phillips A, Cook T, West B, Grainger BM. Gallium nitride efficacy for high-reliability forward converters in spacecraft. IEEE Journal of Emerging and Selected Topics in Power Electronics. 2022 May 17;10(5):5357-70.

Hegazy O, Barrero R, Van Mierlo J, Lataire P, Omar N, Coosemans T. An advanced power electronics interface for electric vehicles applications. IEEE transactions on power electronics. 2013 Apr 3;28(12):5508-21.

Shull CL. A Design Science to Computer Assisted Design Radio Frequency Identification: Virtual to Real-World

Synchronization (Doctoral dissertation, Colorado Technical University).

Nigam, Saurav. Carrier lifetimes in silicon carbide. Carnegie Mellon University, 2008.

She X, Huang AQ, Lucia O, Ozpineci B. Review of silicon carbide power devices and their applications. IEEE Transactions on Industrial Electronics. 2017 Jan 16;64(10):8193-205.

Baliga BJ. Gallium nitride devices for power electronic applications. Semiconductor Science and Technology. 2013 Jun 21;28(7):074011.

MCRBB, Coden. “Reliability Analysis Center.” (1975).

Eisert J. Bibliographies in nuclear science and technology. Section 15. Direct energy conversion. Bibliographien zur kernforschung und kerntechnik. Sektion 15. Direkte energie-umwandlung.

WALES UNIV CARDIFF. International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (4th) Held in Cardiff University, Cardiff, Wales on 21-24 of June 1998, EXMATEC’98.

Gibson EA, editor. Solar energy capture materials. Royal Society of Chemistry; 2019 Aug 19.

Roccaforte F, Fiorenza P, Greco G, Nigro RL, Giannazzo F, Patti A, Saggio M. Challenges for energy efficient wide band gap semiconductor power devices. physica status solidi (a). 2014 Sep;211(9):2063-71.

Kumar A, Moradpour M, Losito M, Franke WT, Ramasamy S, Baccoli R, Gatto G. Wide band gap devices and their application in power electronics. Energies. 2022 Dec 3;15(23):9172.

Covic GA, Boys JT. Inductive power transfer. Proceedings of the IEEE. 2013 Apr 2;101(6):1276-89.

Islam N, Mohamed MF, Khan MF, Falina S, Kawarada H, Syamsul M. Reliability, applications and challenges of GaN HEMT technology for modern power devices: A review. Crystals. 2022 Nov 7;12(11):1581.

Pickenpaugh EA, Thoenes KL, Cox AB, Peacock RW, Rettenmaier WF, NAVAL RESEARCH LAB WASHINGTON DC. Bibliography of NRL Publications-1990. Patent NumberEP 0603818. 1995 Jun 21.

Li L, Li C, Cao Y, Wang F. Recent progress of SiC power devices and applications. IEEJ transactions on electrical and electronic engineering. 2013 Sep;8(5):515-21.

Published

2024-06-22