Optimization of Reluctance at 1310 Nm in SOI Grating Structure for Planar Light Wave Circuits
Keywords:
SOI, Si-SiC, CMOSAbstract
Now days the top layer silicon is made inform of grating structure for the sake of Planner light wave circuits. The grating structure is consists of alternate layers of two materials, for an example alternate layers of silicon carbide and silicon monoxide. When light incidents on SOI waveguide light propagates through the grating. The efficiency of SOI waveguide depends on the grating structure, which is placed on the top of the insulator. In this research, we discusses about silicon grating SOI Structure. Mathematical analysis is described and simulation results with discussions are made for Si-SiC SOI grating structure.
How to cite this article:
Palai G. Optimization of Reluctance at 1310 Nm in SOI Grating Structure for Planar Light Wave Circuits. J Engr Desg Anal 2020; 3(2): 45-49.
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