Comparison of Light Induced Imperfection in a-Se70 Te28 Zn2 and a-Se96 Bi4 Chalcogenide Thin Film
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Comparison, Light Induced Imperfection, a-Se70 Te28 Zn2 and a-Se96 Bi4Abstract
The present work reports observation of exposure of light in thin films of Se70 Te28 Zn2 and Se96Bi4 samples. Amorphous materials have been produced by evaporation method. White light is incident on amorphous materials which are having the intensity of 990 lux. Time of incident light is changed from 0 to 5 hours. The localized state density is determined by method of SCLC, dark as well as presence of light. The localized states density rise with the rise in time of light in Se70 Te28 Zn2 thin film as well as Se96Bi4 glassy alloy. The results indicate that thin-film sample Se70 Te28 Zn2 have density of defect states higher than Se96 Bi4 samples.
How to cite this article: Krishna. Comparison of Light Induced Imperfection in a-Se70 Te28 Zn2 and a-Se96 Bi4 Chalcogenide Thin Film. J Adv Res Mfg Mater Sci Met Engr 2021; 8(2): 1-4.
References
Lucas J. Infrared glasses, Curr Opin. Solid state Mater. Sci 1999; 4: 181.
Cardinal TJ. Non-Cryst. Solids. 1999; 256(257): 353.
Smektala FJ. Non-Cryst. Solids. 1998; 239: 139.
Meneghini CJ. Opt Soc Am 1998; B15: 1305.
Fick JJ. Non-Cryst. Solids. 2000; 272: 200.
Kolobov AV, Tanaka K, HS Nalwa. Hand-book of
Advanced Electronic and Photonic Materials and Devices. 2001; 47.
Hamanaka H, Tanaka K, Iizima S. Solid State Commun 1980; 33: 355.
Hamanaka H, Tanaka K, Iizima S. Solid State Commun 1977; 23: 63.
Hisakuni H, Tanaka K. Appl Phys Lett 1994; 65: 2925.
Tanaka K. Phys Rev 1998; B57: 5163.
Adrienssens GJ, Tikhomirov VK, Elliott SRJ. Non-Cryst. Solids. 1998; 688; 227-230.
Ramachandran S, Bishop SG. Appl Phys Lett 1999; 74: 13.
Asobe M, Kanamori T, Kubodera K. IEEE J Quan Electr 1993; 29: 2325.
Krecmer. P Science 1997; 277: 1799.
Kastner M, Fritzsche H. Philos Mag 1978; B37: 199.
Street RA, Mott NF. Phys Rev Lett 1975; 35: 1293.
Krishna, Pal RK, Agnihotri AK et al. Chalcogenide Letters 2009; 6: 77.
Krishna, Pal RK, Agnihotri AK et al. Journal of Ovonic Research 2009; 5: 71.
Staebler DL, Wronski CR. Appl Phys Lett 1977; 31: 527.
Biegelsen DK, Street RA. Phys Rev Lett 1980; 44: 803.
Redfield D, Bube RH. Photoinduced defects in semiconductors, 1996.
Tanaka K. Phys Rev 1998; B57: 5163.
Stabler DL, Wronski CR. Appl Phys Lett 1977; 31: 527.
Morigaki K. Physics of Amorphous Semiconductors. World Scientific, London, 1999.
