Comparison of Light Induced Imperfection in a-Se70 Te28 Zn2 and a-Se96 Bi4 Chalcogenide Thin Film

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Comparison, Light Induced Imperfection, a-Se70 Te28 Zn2 and a-Se96 Bi4

Abstract

The present work reports observation of exposure of light in thin films of Se70 Te28 Zn2 and Se96Bi4 samples. Amorphous materials have been produced by evaporation method. White light is incident on amorphous materials which are having the intensity of 990 lux. Time of incident light is changed from 0 to 5 hours. The localized state density is determined by method of SCLC, dark as well as presence of light. The localized states density rise with the rise in time of light in Se70 Te28 Zn2 thin film as well as Se96Bi4 glassy alloy. The results indicate that thin-film sample Se70 Te28 Zn2 have density of defect states higher than Se96 Bi4 samples.

How to cite this article: Krishna. Comparison of Light Induced Imperfection in a-Se70 Te28 Zn2 and a-Se96 Bi4 Chalcogenide Thin Film. J Adv Res Mfg Mater Sci Met Engr 2021; 8(2): 1-4.

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Published

2021-10-20